1. ScholarBank@NUS

Daniel John Blackwood

rp04398

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Daniel John Blackwood
Variants
Blackwood, D.
Blackwood, D.J.
 
Main Affiliation
 
Faculty
 
Email
msedjb@nus.edu.sg
 

Publications

Refined By:
Department:  PHYSICS
Department:  COLLEGE OF DESIGN AND ENGINEERING
Type:  Article

Results 1-18 of 18 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiationMangaiyarkarasi, D. ; Teo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Blackwood, D.J. 
22-Oct-1998Effect of heat treatment on the corrosion behaviour of amorphous Mg-18 at% Ni alloyOng, M.S.; Li, Y. ; Blackwood, D.J. ; Ng, S.C. ; Kam, C.H.
32010Electrochemical anodization of silicon-on-insulator wafers using an ACBreese, M.B.H. ; Azimi, S.; Ow, Y.S. ; Mangaiyarkarasi, D. ; Chan, T.K. ; Jiao, S.; Dang, Z.Y.; Blackwood, D.J. 
4Aug-2006Fabrication of patterned porous silicon using high-energy ion irradiationTeo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Champeaux, F.J.T.; Watt, F. ; Blackwood, D.J. 
52007Freestanding waveguides in siliconYang, P.Y.; Mashanovich, G.Z.; Gomez-Morilla, I.; Headley, W.R.; Reed, G.T.; Teo, E.J. ; Blackwood, D.J. ; Breese, M.B.H. ; Bettiol, A.A. 
61-May-2009High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substratesWijesinghe, T.L.S.L. ; Li, S.Q. ; Breese, M.B.H. ; Blackwood, D.J. 
72006Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodizationBreese, M.B.H. ; Champeaux, F.J.T.; Teo, E.J. ; Bettiol, A.A. ; Blackwood, D.J. 
810-Jan-2008Influence of doping density on the current-voltage characteristics of p-type silicon in dilute hydrofluoric acidWijesinghe, T.L.S.L. ; Li, S.Q. ; Blackwood, D.J. 
918-Aug-2008Photoluminescent n-type porous silicon fabricated in the darkLi, S.Q. ; Wijesinghe, T.L.S.L. ; Blackwood, D.J. 
1018-Aug-2008Photoluminescent n-type porous silicon fabricated in the darkLi, S.Q. ; Wijesinghe, T.L.S.L. ; Blackwood, D.J. 
11Jul-2007Porous silicon microcavities fabricated using ion irradiationMangaiyarkarasi, D. ; Breese, M.B.H. ; Sheng, O.Y. ; Blackwood, D.J. 
1220-May-2008Potentiostatic formation of porous silicon in dilute HF: Evidence that nanocrystal size is not restricted by quantum confinementWijesinghe, T.L.S.L. ; Teo, E.J. ; Blackwood, D.J. 
1331-May-2001The influence of heat treatment on the corrosion behaviour of amorphous melt-spun binary Mg-18 at.% Ni and Mg-21 at.% Cu alloyOng, M.S.; Li, Y. ; Blackwood, D.J. ; Ng, S.C. 
1421-Jan-2008Three-dimensional control of optical waveguide fabrication in siliconTeo, E.J. ; Bettiol, A.A. ; Breese, M.B.H. ; Yang, P.; Mashanovich, G.Z.; Headley, W.R.; Reed, G.T.; Blackwood, D.J. 
1519-Apr-2004Three-dimensional microfabrication in bulk silicon using high-energy protonsTeo, E.J. ; Breese, M.B.H. ; Tavernier, E.P.; Bettiol, A.A. ; Watt, F. ; Liu, M.H. ; Blackwood, D.J. 
16Aug-2004Three-dimensional micromachining of silicon using a nuclear microprobeTeo, E.J. ; Tavernier, E.P.; Breese, M.B.H. ; Bettiol, A.A. ; Watt, F. ; Liu, M.H. ; Blackwood, D.J. 
17Jul-2007Tunable colour emission from patterned porous silicon using ion beam writingTeo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Champeaux, F.J.T.; Wijesinghe, T.L.S.L. ; Blackwood, D.J. 
1815-Jan-2009White light from an indium zinc oxide/porous silicon light-emitting diodeHu, G. ; Li, S.Q. ; Gong, H. ; Zhao, Y.; Zhang, J. ; Wijesinghe, T.L.S.L. ; Blackwood, D.J.