Fabrication of patterned porous silicon using high-energy ion irradiation

Abstract

P-type silicon has been patterned using high-energy protons beam prior to electrochemical etching in hydrofluoric acid. The ion beam selectively damages the silicon lattice, resulting in an increase in the local resistivity of the irradiated regions. It is found that the photoluminescence intensity of the irradiated regions increases with proton irradiation into a 0.02 Ω.cm resistivity p-type silicon. By immersing the etched sample into potassium hydroxide, the porous silicon is removed to reveal the underlying three-dimensional structure of the patterned area. © Springer Science + Business Media, LLC 2006.