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Title: Three-dimensional micromachining of silicon using a nuclear microprobe
Authors: Teo, E.J. 
Tavernier, E.P.
Breese, M.B.H. 
Bettiol, A.A. 
Watt, F. 
Liu, M.H. 
Blackwood, D.J. 
Keywords: Electrochemical etching
Porous silicon
Proton beam writing
Silicon micromachining
Issue Date: Aug-2004
Citation: Teo, E.J., Tavernier, E.P., Breese, M.B.H., Bettiol, A.A., Watt, F., Liu, M.H., Blackwood, D.J. (2004-08). Three-dimensional micromachining of silicon using a nuclear microprobe. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 222 (3-4) : 513-517. ScholarBank@NUS Repository.
Abstract: We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raised microstructure after cleaning in diluted potassium hydroxide solution. The thickness of the porous silicon layer formed depends on the accumulated fluence at each scan point. A relationship between the irradiated fluence and feature height is investigated on a p-type [100] silicon with a resistivity of 0.03 Ωcm using focused 2 MeV helium beam. We use this relationship to micromachine multilevel structures with a single focused helium beam energy. © 2004 Elsevier B.V. All rights reserved.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ISSN: 0168583X
DOI: 10.1016/j.nimb.2004.04.159
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