Please use this identifier to cite or link to this item:
|Title:||Electrochemical anodization of silicon-on-insulator wafers using an AC||Authors:||Breese, M.B.H.
|Issue Date:||2010||Citation:||Breese, M.B.H., Azimi, S., Ow, Y.S., Mangaiyarkarasi, D., Chan, T.K., Jiao, S., Dang, Z.Y., Blackwood, D.J. (2010). Electrochemical anodization of silicon-on-insulator wafers using an AC. Electrochemical and Solid-State Letters 13 (8) : H271-H273. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3431038||Abstract:||Electrochemical anodization of bulk silicon has applications in many micromachining processes. However, its use for silicon photonics is limited because silicon-on-insulator (SOI) wafers cannot be anodized using a conventional process because of the buried oxide. We overcome this using an alternating potential to induce an ac across an SOI wafer, treating it as a capacitative structure. The resultant surface roughness is comparable to that obtained using conventional anodization, and uniform etching across a 6 mm exposed surface is obtained with a minimum patterned linewidth of 2.5 μm in the device layer. © 2010 The Electrochemical Society.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/64860||ISSN:||10990062||DOI:||10.1149/1.3431038|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.