Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3431038
Title: Electrochemical anodization of silicon-on-insulator wafers using an AC
Authors: Breese, M.B.H. 
Azimi, S.
Ow, Y.S. 
Mangaiyarkarasi, D. 
Chan, T.K. 
Jiao, S.
Dang, Z.Y.
Blackwood, D.J. 
Issue Date: 2010
Source: Breese, M.B.H., Azimi, S., Ow, Y.S., Mangaiyarkarasi, D., Chan, T.K., Jiao, S., Dang, Z.Y., Blackwood, D.J. (2010). Electrochemical anodization of silicon-on-insulator wafers using an AC. Electrochemical and Solid-State Letters 13 (8) : H271-H273. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3431038
Abstract: Electrochemical anodization of bulk silicon has applications in many micromachining processes. However, its use for silicon photonics is limited because silicon-on-insulator (SOI) wafers cannot be anodized using a conventional process because of the buried oxide. We overcome this using an alternating potential to induce an ac across an SOI wafer, treating it as a capacitative structure. The resultant surface roughness is comparable to that obtained using conventional anodization, and uniform etching across a 6 mm exposed surface is obtained with a minimum patterned linewidth of 2.5 μm in the device layer. © 2010 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64860
ISSN: 10990062
DOI: 10.1149/1.3431038
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