Please use this identifier to cite or link to this item:
|Title:||Three-dimensional microfabrication in bulk silicon using high-energy protons||Authors:||Teo, E.J.
|Issue Date:||19-Apr-2004||Citation:||Teo, E.J., Breese, M.B.H., Tavernier, E.P., Bettiol, A.A., Watt, F., Liu, M.H., Blackwood, D.J. (2004-04-19). Three-dimensional microfabrication in bulk silicon using high-energy protons. Applied Physics Letters 84 (16) : 3202-3204. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1723703||Abstract:||A technique which utilized fast-proton irradiation prior to electrochemical etching was proposed for three-dimensional microfabrication in bulk p-type silicon. The technique relied on the localized damage created by a high dose of focused mega-electron-volt proton irradiation for three dimensional microfabrication. The etch depth was determined from the height difference between the unetched region by using a surface profilometer. The results show that combined with the high spatial resolution of the proton beam, this technique opens up new possibilities for precise three dimensional microfabrication of silicon in a direct and flexible way.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/98398||ISSN:||00036951||DOI:||10.1063/1.1723703|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 12, 2019
WEB OF SCIENCETM
checked on Jul 9, 2019
checked on Nov 9, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.