Three-dimensional microfabrication in bulk silicon using high-energy protons

Abstract

A technique which utilized fast-proton irradiation prior to electrochemical etching was proposed for three-dimensional microfabrication in bulk p-type silicon. The technique relied on the localized damage created by a high dose of focused mega-electron-volt proton irradiation for three dimensional microfabrication. The etch depth was determined from the height difference between the unetched region by using a surface profilometer. The results show that combined with the high spatial resolution of the proton beam, this technique opens up new possibilities for precise three dimensional microfabrication of silicon in a direct and flexible way.