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|Title:||Three-dimensional microfabrication in bulk silicon using high-energy protons|
|Authors:||Teo, E.J. |
|Citation:||Teo, E.J., Breese, M.B.H., Tavernier, E.P., Bettiol, A.A., Watt, F., Liu, M.H., Blackwood, D.J. (2004-04-19). Three-dimensional microfabrication in bulk silicon using high-energy protons. Applied Physics Letters 84 (16) : 3202-3204. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1723703|
|Abstract:||A technique which utilized fast-proton irradiation prior to electrochemical etching was proposed for three-dimensional microfabrication in bulk p-type silicon. The technique relied on the localized damage created by a high dose of focused mega-electron-volt proton irradiation for three dimensional microfabrication. The etch depth was determined from the height difference between the unetched region by using a surface profilometer. The results show that combined with the high spatial resolution of the proton beam, this technique opens up new possibilities for precise three dimensional microfabrication of silicon in a direct and flexible way.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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