Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1723703
Title: Three-dimensional microfabrication in bulk silicon using high-energy protons
Authors: Teo, E.J. 
Breese, M.B.H. 
Tavernier, E.P.
Bettiol, A.A. 
Watt, F. 
Liu, M.H. 
Blackwood, D.J. 
Issue Date: 19-Apr-2004
Citation: Teo, E.J., Breese, M.B.H., Tavernier, E.P., Bettiol, A.A., Watt, F., Liu, M.H., Blackwood, D.J. (2004-04-19). Three-dimensional microfabrication in bulk silicon using high-energy protons. Applied Physics Letters 84 (16) : 3202-3204. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1723703
Abstract: A technique which utilized fast-proton irradiation prior to electrochemical etching was proposed for three-dimensional microfabrication in bulk p-type silicon. The technique relied on the localized damage created by a high dose of focused mega-electron-volt proton irradiation for three dimensional microfabrication. The etch depth was determined from the height difference between the unetched region by using a surface profilometer. The results show that combined with the high spatial resolution of the proton beam, this technique opens up new possibilities for precise three dimensional microfabrication of silicon in a direct and flexible way.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98398
ISSN: 00036951
DOI: 10.1063/1.1723703
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