Please use this identifier to cite or link to this item:
|Title:||Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation||Authors:||Mangaiyarkarasi, D.
|Issue Date:||2005||Citation:||Mangaiyarkarasi, D., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J. (2005). Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation. Journal of the Electrochemical Society 152 (10) : D173-D176. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2032347||Abstract:||Photoluminescence images containing several distinct color emissions, from green to red, have been obtained using high-energy focused ion beam irradiation, in conjunction with metal-aided anodization of 4 Ω cm p-type silicon. The ion irradiation increases the local resistivity in a controlled manner resulting in smaller hole currents flow through the irradiated areas. This causes a controlled redshift of up to 200 nm in the photoluminescence emission, which in terms of the quantum confinement model would correlate to larger nanocrystallites forming in the irradiated region. © 2005 The Electrochemical Society. All rights reserved.||Source Title:||Journal of the Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/96093||ISSN:||00134651||DOI:||10.1149/1.2032347|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 15, 2021
WEB OF SCIENCETM
checked on Jan 7, 2021
checked on Jan 9, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.