Please use this identifier to cite or link to this item:
|Title:||Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation||Authors:||Mangaiyarkarasi, D.
|Issue Date:||2005||Citation:||Mangaiyarkarasi, D., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J. (2005). Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation. Journal of the Electrochemical Society 152 (10) : D173-D176. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2032347||Abstract:||Photoluminescence images containing several distinct color emissions, from green to red, have been obtained using high-energy focused ion beam irradiation, in conjunction with metal-aided anodization of 4 Ω cm p-type silicon. The ion irradiation increases the local resistivity in a controlled manner resulting in smaller hole currents flow through the irradiated areas. This causes a controlled redshift of up to 200 nm in the photoluminescence emission, which in terms of the quantum confinement model would correlate to larger nanocrystallites forming in the irradiated region. © 2005 The Electrochemical Society. All rights reserved.||Source Title:||Journal of the Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/96093||ISSN:||00134651||DOI:||10.1149/1.2032347|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.