Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2032347
Title: Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation
Authors: Mangaiyarkarasi, D. 
Teo, E.J. 
Breese, M.B.H. 
Bettiol, A.A. 
Blackwood, D.J. 
Issue Date: 2005
Citation: Mangaiyarkarasi, D., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J. (2005). Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation. Journal of the Electrochemical Society 152 (10) : D173-D176. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2032347
Abstract: Photoluminescence images containing several distinct color emissions, from green to red, have been obtained using high-energy focused ion beam irradiation, in conjunction with metal-aided anodization of 4 Ω cm p-type silicon. The ion irradiation increases the local resistivity in a controlled manner resulting in smaller hole currents flow through the irradiated areas. This causes a controlled redshift of up to 200 nm in the photoluminescence emission, which in terms of the quantum confinement model would correlate to larger nanocrystallites forming in the irradiated region. © 2005 The Electrochemical Society. All rights reserved.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/96093
ISSN: 00134651
DOI: 10.1149/1.2032347
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