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|Title:||Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation|
|Authors:||Mangaiyarkarasi, D. |
|Citation:||Mangaiyarkarasi, D., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J. (2005). Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation. Journal of the Electrochemical Society 152 (10) : D173-D176. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2032347|
|Abstract:||Photoluminescence images containing several distinct color emissions, from green to red, have been obtained using high-energy focused ion beam irradiation, in conjunction with metal-aided anodization of 4 Ω cm p-type silicon. The ion irradiation increases the local resistivity in a controlled manner resulting in smaller hole currents flow through the irradiated areas. This causes a controlled redshift of up to 200 nm in the photoluminescence emission, which in terms of the quantum confinement model would correlate to larger nanocrystallites forming in the irradiated region. © 2005 The Electrochemical Society. All rights reserved.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
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