Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2032347
DC FieldValue
dc.titleControlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation
dc.contributor.authorMangaiyarkarasi, D.
dc.contributor.authorTeo, E.J.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorBettiol, A.A.
dc.contributor.authorBlackwood, D.J.
dc.date.accessioned2014-10-16T09:19:23Z
dc.date.available2014-10-16T09:19:23Z
dc.date.issued2005
dc.identifier.citationMangaiyarkarasi, D., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J. (2005). Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiation. Journal of the Electrochemical Society 152 (10) : D173-D176. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2032347
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96093
dc.description.abstractPhotoluminescence images containing several distinct color emissions, from green to red, have been obtained using high-energy focused ion beam irradiation, in conjunction with metal-aided anodization of 4 Ω cm p-type silicon. The ion irradiation increases the local resistivity in a controlled manner resulting in smaller hole currents flow through the irradiated areas. This causes a controlled redshift of up to 200 nm in the photoluminescence emission, which in terms of the quantum confinement model would correlate to larger nanocrystallites forming in the irradiated region. © 2005 The Electrochemical Society. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2032347
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1149/1.2032347
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume152
dc.description.issue10
dc.description.pageD173-D176
dc.description.codenJESOA
dc.identifier.isiut000231553300054
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