Freestanding waveguides in silicon

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2749175

Title:	Freestanding waveguides in silicon
Authors:	Yang, P.Y. Mashanovich, G.Z. Gomez-Morilla, I. Headley, W.R. Reed, G.T. Teo, E.J. Blackwood, D.J. Breese, M.B.H. Bettiol, A.A.
Issue Date:	2007
Citation:	Yang, P.Y., Mashanovich, G.Z., Gomez-Morilla, I., Headley, W.R., Reed, G.T., Teo, E.J., Blackwood, D.J., Breese, M.B.H., Bettiol, A.A. (2007). Freestanding waveguides in silicon. Applied Physics Letters 90 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2749175
Abstract:	Using a direct-write process for the production of three dimensional microstructures on a semiconductor, freestanding waveguides have been realized in silicon. The waveguides are produced by a focused beam of high energy protons that is scanned over a silicon substrate. The latent image of the scan is subsequently developed by electrochemical etching. Herein the authors report on the fabrication method as well as determining the propagation loss of these structures. Propagation loss values of 13.4 and 14.6 dBcm were obtained for these preliminary structures for transverse electric and transverse magnetic polarizations, respectively. © 2007 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/64891
ISSN:	00036951
DOI:	10.1063/1.2749175
Appears in Collections:	Staff Publications

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