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Ang Diing Shenp

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Full Name
Ang Diing Shenp
Variants
Ang, D.S.
 
Main Affiliation
 
Faculty
 

Publications

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Type:  Article
Department:  ELECTRICAL ENGINEERING

Results 1-16 of 16 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
11998A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETsAng, D.S. ; Ling, C.H. 
2Jun-1997A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurementAng, D.S. ; Ling, C.H. 
3Mar-1999A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET'sAng, D.S. ; Ling, C.H. 
4Jan-1998A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET'sAng, D.S. ; Ling, C.H. 
51998A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET'sAng, D.S. ; Ling, C.H. 
62000Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiationLing, C.H. ; Ang, C.H.; Ang, D.S. 
7Aug-1995Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET'sLing, C.H. ; Ang, D.S. ; Tan, S.E.
81-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
91996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
1015-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
11Jul-1994Hot-electron degradation in NMOSFET's: Results from temperature annealLing, C.H. ; Ah, L.K.; Choi, W.K. ; Tan, S.E.; Ang, D.S. 
12Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H. 
13Jul-1995Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping currentLing, C.H. ; Tan, S.E.; Ang, D.S. 
14Jun-1995Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature annealsAng, D.S. ; Ling, C.H. ; Yeow, Y.T.
15Mar-1997The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitorsLing, C.H. ; Ang, D.S. ; Ooi, J.A.
161999The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET'sAng, D.S. ; Ling, C.H.