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Lee Sungjoo

rp01794

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Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

Results 1-20 of 51 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
211-Jul-2007B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: Effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma processWhang, S.-J. ; Lee, S. ; Chi, D.-Z.; Yang, W.-F.; Cho, B.-J. ; Liew, Y.-F. ; Kwong, D.-L.
3Feb-2003Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applicationsLee, S.J. ; Choi, C.H.; Kamath, A.; Clark, R.; Kwong, D.L.
42008Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAsDalapati, G.K.; Sridhara, A.; Wong, A.S.W.; Chia, C.K.; Lee, S.J. ; Chi, D.
5May-2011Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technologyLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
62007Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F. ; Kwong, D.L. 
72005Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contactChi, D.Z.; Lee, R.T.P.; Chua, S.J.; Lee, S.J. ; Ashok, S.; Kwong, D.-L.
8Feb-2008Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrierZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L.
9Dec-2003Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate DielectricsLee, S. ; Kwong, D.-L.
102006Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contactsYao, H.B.; Chi, D.Z.; Li, R.; Lee, S.J. ; Kwong, D.-L.
112008Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxyChia, C.K.; Dong, J.R.; Chi, D.Z.; Sridhara, A.; Wong, A.S.W.; Suryana, M.; Dalapati, G.K.; Chua, S.J.; Lee, S.J. 
124-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
13Oct-2005Electron mobility enhancement using ultrathin pure Ge on Si substrateYeo, C.C.; Cho, B.J. ; Gao, F.; Lee, S.J. ; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.
142008Energy-band alignments of Hf O2 on p-GaAs substratesDalapati, G.K.; Oh, H.-J. ; Lee, S.J. ; Sridhara, A.; Wong, A.S.W.; Chi, D.
15Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
162009Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drainGao, F.; Lee, S.J. ; Kwong, D.L.
172008Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devicesBliznetsov, V.; Singh, N.; Kumar, R.; Balasubramanian, N.; Guo, P.; Lee, S.J. ; Cai, Y.
18May-2008Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurationsWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Loh, T.H.; Yu, M.B.; Lee, S.J. ; Lo, G.-Q.; Kwong, D.-L.
1924-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
202007GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivationGao, F.; Lee, S.J. ; Chi, D.Z.; Balakumar, S.; Kwong, D.-L.