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https://doi.org/10.1109/LED.2005.855420
| Title: | Electron mobility enhancement using ultrathin pure Ge on Si substrate | Authors: | Yeo, C.C. Cho, B.J. Gao, F. Lee, S.J. Lee, M.H. Yu, C.-Y. Liu, C.W. Tang, L.J. Lee, T.W. |
Keywords: | Effective electron mobility Ge High-K gate dielectric |
Issue Date: | Oct-2005 | Citation: | Yeo, C.C., Cho, B.J., Gao, F., Lee, S.J., Lee, M.H., Yu, C.-Y., Liu, C.W., Tang, L.J., Lee, T.W. (2005-10). Electron mobility enhancement using ultrathin pure Ge on Si substrate. IEEE Electron Device Letters 26 (10) : 761-763. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.855420 | Abstract: | We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/55851 | ISSN: | 07413106 | DOI: | 10.1109/LED.2005.855420 |
| Appears in Collections: | Staff Publications |
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