Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
 
 
Email
elelsj@nus.edu.sg
 

Publications

Results 41-51 of 51 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
41Sep-2011Silicon nanowire forthermoelectric applications: Effects of contact resistanceLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
422011Silicon waveguide integrated germanium JFET photodetector with improved speed performanceWang, J. ; Yu, M.; Lo, G.; Kwong, D.-L.; Lee, S. 
432006Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrateBalakumar, S.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.L.; Fei, G.; Lee, S.J. 
442008Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopyOh, H.J. ; Lin, J.Q.; Lee, S.J. ; Dalapati, G.K.; Sridhara, A.; Chi, D.Z.; Chua, S.J.; Lo, G.Q.; Kwong, D.L.
452007Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport propertiesWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Kwong, D.L.
462010Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistorSuleiman, S.A.; Oh, H.J. ; Du, A.; Ng, C.M.; Lee, S.J. 
4714-Mar-2005Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectricGao, F.; Lee, S.J. ; Pan, J.S.; Tang, L.J.; Kwong, D.-L.
48Apr-2009Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxidesSun, Z.-Q.; Whang, S.-J. ; Yang, W.-F.; Lee, S.-J. 
49Jan-2004TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate ElectrodeLee, S. ; Kwong, D.L.
50Nov-2008Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistorYang, W.F.; Lee, S.J. ; Liang, G.C. ; Eswar, R.; Sun, Z.Q.; Kwong, D.L. 
11Apr-2011Vertical Si-Nanowire n-type tunneling FETs with low subthreshold swing ≤50 mV/decade) at room temperatureGandhi, R.; Chen, Z.; Singh, N.; Banerjee, K.; Lee, S.