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|Title:||TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode||Authors:||Lee, S.
High-K gate stack
Metal gate electrode
|Issue Date:||Jan-2004||Citation:||Lee, S., Kwong, D.L. (2004-01). TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode. IEEE Electron Device Letters 25 (1) : 13-15. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.821590||Abstract:||In this letter, we present a comprehensive study on longterm reliability of ultrathin TaN-gated chemical vapor deposition gate stack with EOT = 8.5-10.5 Å. It is found that, due to the asymmetric band structure of HfO 2 gate stack with an interfacial layer, the HfO 2 gate stack shows polarity-dependent leakage current, critical defect density, and defect generation rate, under gate and substrate injection. However, no such polarity dependence of time-to-breakdown (T BD) is observed when T BD is plotted as a function of gate voltage. The 10-year lifetime of an HfO 2 gate stack is projected to be Vg = -1.63 V for the equivalent oxide thickness (EOT) = 8.6 Å and Vg = -1.88 V for EOT = 10.6 Å at 25 °C. These excellent reliability characteristics are attributed to reduced leakage current of HfO 2 gate stack with physically thicker films that result in larger critical defect density and Weibull slope to that of SiO 2 for the same EOT. However, at 150 °C, and with area scaling to 0.1 cm 2 and low percentile of 0.01%, the maximum allowed voltages are projected to Vg = -0.6 V and -0.75 V for EOT of 8.6, and 10.6 A, respectively.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83149||ISSN:||07413106||DOI:||10.1109/LED.2003.821590|
|Appears in Collections:||Staff Publications|
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