Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1875733

Title:	Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
Authors:	Gao, F. Lee, S.J. Pan, J.S. Tang, L.J. Kwong, D.-L.
Issue Date:	14-Mar-2005
Citation:	Gao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L. (2005-03-14). Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric. Applied Physics Letters 86 (11) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1875733
Abstract:	A surface passivation method to improve the film quality of HfO 2 gate dielectric on Ge substrate by using ultrathin AlN x layer is reported. Results show that the AlN x passivation layer is more effective in suppressing the GeO x formation at the HfO 2/Ge interface, resulting in improved C-V characteristics, than surface nitridation-passivated Ge devices. In addition, a thermal stability study shows AlN x passivation is promising for future Ge metal-oxide-semiconductor devices. © 2005 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83125
ISSN:	00036951
DOI:	10.1063/1.1875733
Appears in Collections:	Staff Publications

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