Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

Abstract

A surface passivation method to improve the film quality of HfO 2 gate dielectric on Ge substrate by using ultrathin AlN x layer is reported. Results show that the AlN x passivation layer is more effective in suppressing the GeO x formation at the HfO 2/Ge interface, resulting in improved C-V characteristics, than surface nitridation-passivated Ge devices. In addition, a thermal stability study shows AlN x passivation is promising for future Ge metal-oxide-semiconductor devices. © 2005 American Institute of Physics.