Please use this identifier to cite or link to this item:
|Title:||Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor||Authors:||Suleiman, S.A.
|Issue Date:||2010||Citation:||Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J. (2010). Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor. Electrochemical and Solid-State Letters 13 (10) : H336-H338. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3465300||Abstract:||In this work, we studied the thermal stability of a plasma- PH3 passivated HfAlO/ InGa0.53As0.47 gate stack for high speed metal-oxide-semiconductor field effect transistor (MOSFET) application, and results show excellent thermal stability up to 800°C with negligible changes in the equivalent oxide thickness, interface trap densities (Dit), and subthreshold slope. An increase in leakage current (1.10 × 10-4 A/ cm2 at Vg =1.5 V) after 800°C anneal can be attributed to the localized thinning of the gate dielectric and the rough interface caused by the out-diffusion of Ga/As, as observed by transmission electron microscopy and energy dispersion X-ray analysis. Dit measurement by the charge-trapping method showed suppressed Dit at the upper half of the bandgap for plasma-PH3 passivated devices, which is favorable for n-channel MOSFET operation. © 2010 The Electrochemical Society.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83105||ISSN:||10990062||DOI:||10.1149/1.3465300|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 4, 2023
WEB OF SCIENCETM
checked on Jan 27, 2023
checked on Feb 2, 2023
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.