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|Title:||Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor||Authors:||Suleiman, S.A.
|Issue Date:||2010||Citation:||Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J. (2010). Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor. Electrochemical and Solid-State Letters 13 (10) : H336-H338. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3465300||Abstract:||In this work, we studied the thermal stability of a plasma- PH3 passivated HfAlO/ InGa0.53As0.47 gate stack for high speed metal-oxide-semiconductor field effect transistor (MOSFET) application, and results show excellent thermal stability up to 800°C with negligible changes in the equivalent oxide thickness, interface trap densities (Dit), and subthreshold slope. An increase in leakage current (1.10 × 10-4 A/ cm2 at Vg =1.5 V) after 800°C anneal can be attributed to the localized thinning of the gate dielectric and the rough interface caused by the out-diffusion of Ga/As, as observed by transmission electron microscopy and energy dispersion X-ray analysis. Dit measurement by the charge-trapping method showed suppressed Dit at the upper half of the bandgap for plasma-PH3 passivated devices, which is favorable for n-channel MOSFET operation. © 2010 The Electrochemical Society.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83105||ISSN:||10990062||DOI:||10.1149/1.3465300|
|Appears in Collections:||Staff Publications|
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