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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 281-300 of 300 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
281Apr-2005Three-layer laminated metal gate electrodes with tunable work functions for CMOS applicationsBai, W.P.; Bae, S.H.; Wen, H.C.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Yamada, N.; Li, M.F. ; Kwong, D.-L.
282Jan-2006Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETsWang, X.P.; Li, M.-F. ; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H. ; Chin, A. ; Zhu, C.X. ; Ning, J.; Yu, M.B.; Kwong, D.-L.
31994Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPxLi, M.F. ; Luo, Y.Y.; Yu, P.Y.; Weber, E.R.; Fujioka, H.; Du, A.Y.; Chua, S.J. ; Lim, Y.T.
42005Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Kwong, D.-L.
5Mar-2008Understand NBTI mechanism by developing novel measurement techniquesLi, M.-F. ; Huang, D.; Shen, C.; Yang, T.; Liu, W.J.; Liu, Z.
62008Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration schemeWang, X.P.; Yu, H.Y.; Yeo, Y.-C. ; Li, M.-F. ; Chang, S.-Z.; Cho, H.-J.; Kubicek, S.; Wouters, D.; Groeseneken, G.; Biesemans, S.
7Nov-1998Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.-F. 
81997Valence band parameters for wurtzite GaN and InNYeo, Y.C. ; Chong, T.C. ; Li, M.F. 
915-Jul-2005Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistorsLow, T.; Li, M.F. ; Yeo, Y.C. ; Fan, W.J.; Ng, S.T.; Kwong, D.L.
1015-Sep-1996Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wellsFan, W.J.; Li, M.F. ; Chong, T.C. ; Xia, J.B.
11Oct-2003Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectricsYang, M.Y.; Huang, C.H.; Chin, A.; Zhu, C. ; Cho, B.J. ; Li, M.F. ; Kwong, D.-L.
122003Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate DielectricsHuang, C.H.; Yang, M.Y.; Chin, A.; Chen, W.J.; Zhu, C.X. ; Cho, B.J. ; Li, M.-F. ; Kwong, D.L.
132003Voltage and Temperature Dependence of Capacitance of High-K HfO 2 MIM Capacitors: A Unified Understanding and PredictionZhu, C. ; Hu, H.; Yu, X.; Kim, S.J. ; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.L.
14Apr-2007Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectricsWang, X.P.; Yu, H.Y.; Li, M.-F. ; Zhu, C.X. ; Biesemans, S.; Chin, A.; Sun, Y.Y.; Feng, Y.P. ; Lim, A.; Yeo, Y.-C. ; Loh, W.Y.; Lo, G.Q.; Kwong, D.-L.
15Jan-2008Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectricWang, X.P.; Li, M.-F. ; Yu, H.Y.; Yang, J.J.; Chen, J.D. ; Zhu, C.X. ; Du, A.Y.; Loh, W.Y.; Biesemans, S.; Chin, A.; Lo, G.Q.; Kwong, D.-L.
162007Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration processWang, X.P.; Li, M.-F. ; Yu, H.Y.; Ren, C.; Loh, W.Y.; Zhu, C.X. ; Chin, A.; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.Q.; Kwong, D.L.
17Nov-2007Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesWang, X.P.; Lim, A.E.-J.; Yu, H.Y.; Li, M.-F. ; Ren, C.; Loh, W.-Y.; Zhu, C.X. ; Chin, A. ; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.-Q.; Kwong, D.-L. 
18Aug-2006Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applicationsRen, C.; Chan, D.S.H. ; Li, M.-F. ; Loh, W.-Y.; Balakumar, S.; Tung, C.H.; Balasubramanian, N.; Kwong, D.-L.
1910-May-2006Work function tuning of metal nitride electrodes for advanced CMOS devicesRen, C.; Faizhal, B.B.; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Balasubramanian, N.; Kwong, D.-L.
20Mar-2006Yb-doped Ni FUSI for the n-MOSFETs gate electrode applicationChen, J.D. ; Yu, H.Y.; Li, M.F. ; Kwong, D.-L.; van Dal, M.J.H.; Kittl, J.A.; Lauwers, A.; Absil, P.; Jurczak, M.; Biesemans, S.