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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2005

Results 1-20 of 24 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistorToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Balasubramanian, N.; Tung, C.-H.; Benistant, F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
22005Design of superjunction power MOSFET devices using the gradient oxide-bypassed structureChen, Y.; Liang, Y.C. ; Samudra, G.S. 
32005Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystalsSamanta, S.K. ; Singh, P.K.; Yoo, W.J. ; Samudra, G. ; Yeo, Y.-C. ; Bera, L.K.; Balasubramanian, N.
42005Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit applicationYang, T.; Li, M.F. ; Shen, C.; Ang, C.H.; Zhu, C. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.L.
5Nov-2005Fast DNBTI components in p-MOSFET with SiON dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.-L.
62005First principle study of Si and Ge band structure for UTB MOSFETs applicationsLow, T.; Feng, Y.P. ; Li, M.F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P.; Chan, L.; Kwong, D.L.
7Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
828-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
92005Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory applicationWang, Y.Q.; Singh, P.K.; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, A.; Hwang, W.S.; Chen, J.H. ; Wang, S.J.; Kwong, D.-L.
10Jul-2005Low noise RF MOSFETs on flexible plastic substratesKao, H.L.; Chin, A. ; Hung, B.F.; Lee, C.F.; Lai, J.M.; McAlister, S.P.; Samudra, G.S. ; Yoo, W.J. ; Chi, C.C.
112005Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retentionChin, A. ; Laio, C.C.; Chen, C.; Chiang, K.C.; Yu, D.S.; Yoo, W.J. ; Samudra, G.S. ; Wang, T.; Hsieh, I.J.; McAlister, S.P.; Chi, C.C.
12Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
132005Modelling, analysis and design of cascaded forward and interleaved converter for powering future microprocessorsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
142005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
158-Feb-2005Power MOSFET having enhanced breakdown voltageLIANG, YUNG CHII ; SAMUDRA, GANESH SHANKAR ; GAN, KIAN PAAU; YANG, XIN 
16Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
17Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
18Apr-2005Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectricsChong, C.C.; Zhou, K.H.; Bai, P.; Li, Er.P.; Samudra, G.S. 
192005Source/drain germanium condensation for P-channel strained ultra-thin body transistorsChui, K.-J.; Ang, K.-W.; Madan, A.; Wang, H.; Tung, C.-H.; Wong, L.-Y.; Wang, Y.; Choy, S.-F.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
202005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.