1. ScholarBank@NUS

Samudra,Ganesh S

rp00141

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Yeo, Y.-C.

Results 121-135 of 135 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1212007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
12224-Apr-2007Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
123Jan-2008Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressorsWang, G.H.; Toh, E.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1242006Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride linerWang, G.H.; Toh, E.-H.; Toh; Hoe, K.M.; Tripathy, S.; Balakurnar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
125Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
6Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
72007Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressorsWang, G.H.; Toh, E.-H.; Hoe, K.-M.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
8Aug-2007Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
92007Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETsLee, R.T.P. ; Tan, K.-M.; Liow, T.-Y.; Lim, A.E.-J.; Lo, G.-Q.; Samudra', G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1024-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
112009Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drainKoh, S.-M.; Sinha, M.; Tong, Y.; Chin, H.-C.; Fang, W.-W.; Zhang, X.; Ng, C.-M.; Samudra, G. ; Yeo, Y.-C. 
122005Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Wang, Y.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
132009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C. 
142008Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tripathy, S. ; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
15Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.