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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

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Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 241-260 of 271 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
2412007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
24224-Apr-2007Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
243Jan-2008Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressorsWang, G.H.; Toh, E.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
2442006Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride linerWang, G.H.; Toh, E.-H.; Toh; Hoe, K.M.; Tripathy, S.; Balakurnar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
245Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
246Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
2472017Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structuresChang, T.-F; Chang, C.-Y; Huang, C.-F; Liang, Y.C ; Samudra, G.S ; Lin, R.-M
2482007Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressorsWang, G.H.; Toh, E.-H.; Hoe, K.-M.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
249Aug-2007Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2502007Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETsLee, R.T.P. ; Tan, K.-M.; Liow, T.-Y.; Lim, A.E.-J.; Lo, G.-Q.; Samudra', G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
25124-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
2522008Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transportZhao, H.; Rustagi, S.C.; Singh, N.; Ma, F.-J. ; Samudra, G.S. ; Budhaaraju, K.D.; Manhas, S.K.; Tung, C.H.; Lo, G.Q.; Baccarani, G.; Kwong, D.L.
2532009Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drainKoh, S.-M.; Sinha, M.; Tong, Y.; Chin, H.-C.; Fang, W.-W.; Zhang, X.; Ng, C.-M.; Samudra, G. ; Yeo, Y.-C. 
2542007Superjunction power LDMOS on partial SOI platformChen, Y.; Buddharaju, K.D.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.H.
255May-2002Supply-voltage optimization for below-70-nm technology-node MOSFETsWakabayashi, H.; Samudra, G.S. ; Djomehri, I.J.; Nayfeh, H.; Antoniadis, D.A.
25627-May-2010Temperature independent current biasing employing TFETGuo, P.F.; Yang, Y.; Samudra, G. ; Heng, C.H. ; Yeo, Y.C. 
257Feb-2005Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
2582012Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTsHuang, H.; Liang, Y.C. ; Samudra, G.S. 
2592005Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Wang, Y.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
2602005Three-port RF characterization of MOS transistorsMahalingam, U.; Rustagi, S.C.; Samudra, G.S.