Please use this identifier to cite or link to this item:
Title: Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures
Authors: Chang, T.-F
Chang, C.-Y
Huang, C.-F
Liang, Y.C 
Samudra, G.S 
Lin, R.-M
Issue Date: 2017
Publisher: Electrochemical Society
Citation: Chang, T.-F, Chang, C.-Y, Huang, C.-F, Liang, Y.C, Samudra, G.S, Lin, R.-M (2017). Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures. ECS Journal of Solid State Science and Technology 6 (11) : S3052-S3055. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: In this paper, AlGaN/GaN Schottky gate HEMTs on silicon based on vertical interconnect structures were fabricated and analyzed. The device with a vertical drain interconnect to the substrate shows worse current collapse based on drain lag measurement compared with both the conventional lateral device without vertical interconnect and the device with a vertical source interconnect to the substrate, implying that electrons are trapped in the epilayer due to existence of a vertical electric field. The trapped electrons in the epi and buffer layers introduce a positive shift in the threshold voltage by about 1.5 V together with an increase in the specific on-resistance, but show nearly no effect on the turn-on voltage of the Schottky junction. © The Author(s) 2017.
Source Title: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769
DOI: 10.1149/2.0131711jss
Rights: Attribution 4.0 International
Appears in Collections:Elements
Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Chang_2017_ECS_J._Solid_State_Sci._Technol._6_S3052.pdf792.57 kBAdobe PDF



Page view(s)

checked on Jan 14, 2021

Google ScholarTM



This item is licensed under a Creative Commons License Creative Commons