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Yuan Ping Feng

rp00403

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Full Name
Yuan Ping Feng
Variants
Feng, Y.-P.
Ping Feng, Y.
Yuanping, F.
Feng Y.P.
Feng, Y.
Yuan-Ping, F.
Feng, Yuan Ping
Feng, Y.P.
Feng, Y.-Y.
Feng, Yuan-ping
Yuan Ping Feng
 
Main Affiliation
 
Faculty
 
Email
phyfyp@nus.edu.sg
 

Publications

Refined By:
Author:  Feng, Y.P.
Date Issued:  [2000 TO 2009]
Author:  Wang, S.J.

Results 1-19 of 19 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12006Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfacesDong, Y.F.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.; Wang, S.J.
22007Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectricYang, M. ; Wang, S.J.; Peng, G.W. ; Wu, R.Q. ; Feng, Y.P. 
32008Band alignment and thermal stability of HfO2 gate dielectric on SiCChen, Q.; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
4Sep-2007Band engineering in the high-k dielectrics gate stacksWang, S.J.; Dong, Y.F.; Feng, Y.P. ; Huan, A.C.H.
52009Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculationChen, Q.; Yang, M. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
62006Chemical tuning of band alignments for metal gate/high- κ oxide interfacesDong, Y.F.; Wang, S.J.; Feng, Y.P. ; Huan, A.C.H.
72006Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 filmsMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, C.H.A.; Feng, Y.P. ; Ong, C.K. 
82006Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectricWang, S.J.; Chai, J.W.; Dong, Y.F.; Feng, Y.P. ; Sutanto, N.; Pan, J.S.; Huan, A.C.H.
92007Electronic structure of germanium nitride considered for gate dielectricsYang, M. ; Wang, S.J.; Feng, Y.P. ; Peng, G.W. ; Sun, Y.Y. 
102009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
1129-May-2006Evolution of Schottky barrier heights at Ni/HfO2 interfacesLi, Q.; Dong, Y.F.; Wang, S.J.; Chai, J.W.; Huan, A.C.H.; Feng, Y.P. ; Ong, C.K. 
122006Evolution of Schottky barrier heights at Ni/HfO2interfacesLi, Q. ; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. ; Wang, S.J.; Chai, J.W.; Huan, A.C.H.
1315-May-2006First-principles studies on initial growth of Ni on MgO(0 0 1) surfaceDong, Y.F.; Wang, S.J.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.
1415-Jul-2005First-principles study of ZrO2 Si interfaces: Energetics and band offsetsDong, Y.F.; Feng, Y.P. ; Wang, S.J.; Huan, A.C.H. 
152009Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric filmMi, Y.Y.; Wang, S.J.; Zegenhagen, J.; Chai, J.W.; Pan, J.S.; Huan, C.H.A.; Feng, Y.P. ; Ong, C.K. 
1628-Mar-2005Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfacesDong, Y.F.; Wang, S.J.; Chai, J.W.; Feng, Y.P. ; Huan, A.C.H. 
172009Impact of oxide defects on band offset at GeO2 /Ge interfaceYang, M. ; Wu, R.Q. ; Chen, Q.; Deng, W.S.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
182008Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy studyYang, M. ; Peng, G.W. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Chen, Q.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
192009Structural, optical, magnetic and electrical properties of Zn 1-xCo xO thin filmsTay, M.; Wu, Y.H. ; Han, G.C.; Chen, Y.B.; Pan, X.Q.; Wang, S.J.; Yang, P.; Feng, Y.P.