Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3153507
Title: Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film
Authors: Mi, Y.Y.
Wang, S.J.
Zegenhagen, J.
Chai, J.W.
Pan, J.S.
Huan, C.H.A.
Feng, Y.P. 
Ong, C.K. 
Issue Date: 2009
Citation: Mi, Y.Y., Wang, S.J., Zegenhagen, J., Chai, J.W., Pan, J.S., Huan, C.H.A., Feng, Y.P., Ong, C.K. (2009). Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film. Applied Physics Letters 94 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3153507
Abstract: An epitaxial Ni thin film is grown on a LaAlO3 single-crystalline thin film on Si (001). The p -type Schottky barrier height at the Ni/ LaAlO3 interface is measured to be 2.88 eV by x-ray photoemission spectroscopy. The effective work function of the Ni film on LaAlO3 is determined to be 5.15 eV. Good epitaxial quality and a high effective work function suggest that Ni is a promising gate material integrated with LaAlO3 dielectric films for p -type metal oxide semiconductor field effect transistors. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96751
ISSN: 00036951
DOI: 10.1063/1.3153507
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