Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mee.2007.04.050
Title: Band engineering in the high-k dielectrics gate stacks
Authors: Wang, S.J.
Dong, Y.F.
Feng, Y.P. 
Huan, A.C.H.
Keywords: Band alignment
High-k gate stacks
Interface
Metal gate
Issue Date: Sep-2007
Citation: Wang, S.J., Dong, Y.F., Feng, Y.P., Huan, A.C.H. (2007-09). Band engineering in the high-k dielectrics gate stacks. Microelectronic Engineering 84 (9-10) : 2332-2335. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2007.04.050
Abstract: In this report, the band alignment related issues for high-k gate stacks have been discussed and the band engineering has been studied by combinational characterization of in-situ x-ray photoemission spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and first-principles calculations based on density functional theory (DFT). The results show that band alignments at metal-gate/high-κ interfaces can be engineered to satisfy the application for CMOS devices through the interface structure-control. © 2007 Elsevier B.V. All rights reserved.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/95848
ISSN: 01679317
DOI: 10.1016/j.mee.2007.04.050
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