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|Title:||Band engineering in the high-k dielectrics gate stacks|
High-k gate stacks
|Citation:||Wang, S.J., Dong, Y.F., Feng, Y.P., Huan, A.C.H. (2007-09). Band engineering in the high-k dielectrics gate stacks. Microelectronic Engineering 84 (9-10) : 2332-2335. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2007.04.050|
|Abstract:||In this report, the band alignment related issues for high-k gate stacks have been discussed and the band engineering has been studied by combinational characterization of in-situ x-ray photoemission spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and first-principles calculations based on density functional theory (DFT). The results show that band alignments at metal-gate/high-κ interfaces can be engineered to satisfy the application for CMOS devices through the interface structure-control. © 2007 Elsevier B.V. All rights reserved.|
|Source Title:||Microelectronic Engineering|
|Appears in Collections:||Staff Publications|
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