Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2969061
Title: Band alignment and thermal stability of HfO2 gate dielectric on SiC
Authors: Chen, Q.
Feng, Y.P. 
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
Issue Date: 2008
Citation: Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2008). Band alignment and thermal stability of HfO2 gate dielectric on SiC. Applied Physics Letters 93 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2969061
Abstract: The band alignment and thermal stability for HfO2 films on SiC with and without nitridation have been studied by using photoemission spectroscopy. The valence- and conduction-band offsets at HfO2 /4H-SiC interfaces were measured to be 1.02 and 1.53 eV, respectively. The atomic source nitridation improves interface thermal stability with nitrogen passivation for the oxygen vacancies in dielectric films and for the defects on SiC surface, but induces band gap reduction for the HfO2 dielectric layer and band alignment shift at the interface. Postnitridation annealing helps to improve the band offsets of dielectric film to have sufficient injection barrier. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/95846
ISSN: 00036951
DOI: 10.1063/1.2969061
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

18
checked on May 23, 2018

WEB OF SCIENCETM
Citations

15
checked on May 8, 2018

Page view(s)

39
checked on May 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.