Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1891285
Title: Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces
Authors: Dong, Y.F.
Wang, S.J.
Chai, J.W.
Feng, Y.P. 
Huan, A.C.H. 
Issue Date: 28-Mar-2005
Citation: Dong, Y.F., Wang, S.J., Chai, J.W., Feng, Y.P., Huan, A.C.H. (2005-03-28). Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces. Applied Physics Letters 86 (13) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1891285
Abstract: The Schottky-barrier heights for the Ni and Zr O2 interfaces have been determined using the x-ray photoemission method. Depending on the surface treatment of Zr O2, the variation of Schottky-barrier heights at NiZr O2 interfaces was found as large as 0.76±0.10 eV. The p -type Schottky-barrier height for the oxygen-rich (oxygen-deficient) interface was measured to be 2.60 eV (3.36 eV). First-principles calculations provide a microscopic explanation of such variation, which was attributed to the different interface dipole formed by interfacial Ni-O, Ni-Zr bonds, or oxygen vacancies. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96873
ISSN: 00036951
DOI: 10.1063/1.1891285
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