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|Title:||Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces|
|Citation:||Dong, Y.F., Wang, S.J., Chai, J.W., Feng, Y.P., Huan, A.C.H. (2005-03-28). Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces. Applied Physics Letters 86 (13) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1891285|
|Abstract:||The Schottky-barrier heights for the Ni and Zr O2 interfaces have been determined using the x-ray photoemission method. Depending on the surface treatment of Zr O2, the variation of Schottky-barrier heights at NiZr O2 interfaces was found as large as 0.76±0.10 eV. The p -type Schottky-barrier height for the oxygen-rich (oxygen-deficient) interface was measured to be 2.60 eV (3.36 eV). First-principles calculations provide a microscopic explanation of such variation, which was attributed to the different interface dipole formed by interfacial Ni-O, Ni-Zr bonds, or oxygen vacancies. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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