Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3253420
Title: | Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation | Authors: | Chen, Q. Yang, M. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. |
Issue Date: | 2009 | Citation: | Chen, Q., Yang, M., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2009). Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation. Applied Physics Letters 95 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3253420 | Abstract: | High quality HfO2 dielectrics have been grown on ZnO (0001) substrates. The valence- and conduction-band offsets for HfO2 /ZnO (0001) heterojunctions have been determined to be 0.14±0.05 and 2.29±0.05 eV, respectively, by using in situ x-ray photoemission spectroscopy. First-principles calculations show that the valence-band offset at the HfO2 /ZnO (0001) interface of the most energetically favorable interface structure is 0.40 eV, which is consistent with the experimental results. © 2009 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/95853 | ISSN: | 00036951 | DOI: | 10.1063/1.3253420 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.