Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3253420
Title: Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation
Authors: Chen, Q.
Yang, M. 
Feng, Y.P. 
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
Issue Date: 2009
Citation: Chen, Q., Yang, M., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2009). Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation. Applied Physics Letters 95 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3253420
Abstract: High quality HfO2 dielectrics have been grown on ZnO (0001) substrates. The valence- and conduction-band offsets for HfO2 /ZnO (0001) heterojunctions have been determined to be 0.14±0.05 and 2.29±0.05 eV, respectively, by using in situ x-ray photoemission spectroscopy. First-principles calculations show that the valence-band offset at the HfO2 /ZnO (0001) interface of the most energetically favorable interface structure is 0.40 eV, which is consistent with the experimental results. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/95853
ISSN: 00036951
DOI: 10.1063/1.3253420
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