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|Title:||Evolution of Schottky barrier heights at Ni/HfO2 interfaces|
|Source:||Li, Q., Dong, Y.F., Wang, S.J., Chai, J.W., Huan, A.C.H., Feng, Y.P., Ong, C.K. (2006-05-29). Evolution of Schottky barrier heights at Ni/HfO2 interfaces. Applied Physics Letters 88 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2208271|
|Abstract:||The evolution of Schottky barrier heights (SBHs) at NiHf O2 n-Si stacks was studied by in situ x -ray photoemission. It was found that the n -SBH (or the effective work function) increases with thickness of the Ni overlayer and approaches 2.4 eV (or 4.9 eV) when metallic behavior of Ni overlayer is recovered. This is in good agreement with results of first-principles calculations. The effective work function of Ni in contact with Hf O2 was found different from that in vacuum by 0.3 eV. The interface dipole was induced by the weak interaction of Ni thin film and Hf O2 dielectric. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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