Please use this identifier to cite or link to this item:
|Title:||Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces|
|Source:||Dong, Y.F., Mi, Y.Y., Feng, Y.P., Huan, A.C.H., Wang, S.J. (2006). Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2357012|
|Abstract:||Schottky barrier heights (SBHs) at metal gate/LaAlO3 (001) interfaces were studied by using ab initio calculations based on density functional theory. Three kinds of metals, Al, Rh, and Pt, were considered with various interface chemistries on LaAlO3 (001) surface. It was found that the Fermi level of metal gates is not pinned at metal gate/LaAlO 3 interfaces. The SBH is largely determined by the interface chemistry. The interface metal up to three layers can ultimately decide the SBH, and the SBH at the metal gate/LaAlO3 interface can be efficiently tuned by including monolayer heterovalent metal at the interface. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Mar 5, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.