Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2357012
Title: Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces
Authors: Dong, Y.F.
Mi, Y.Y.
Feng, Y.P. 
Huan, A.C.H.
Wang, S.J.
Issue Date: 2006
Citation: Dong, Y.F., Mi, Y.Y., Feng, Y.P., Huan, A.C.H., Wang, S.J. (2006). Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2357012
Abstract: Schottky barrier heights (SBHs) at metal gate/LaAlO3 (001) interfaces were studied by using ab initio calculations based on density functional theory. Three kinds of metals, Al, Rh, and Pt, were considered with various interface chemistries on LaAlO3 (001) surface. It was found that the Fermi level of metal gates is not pinned at metal gate/LaAlO 3 interfaces. The SBH is largely determined by the interface chemistry. The interface metal up to three layers can ultimately decide the SBH, and the SBH at the metal gate/LaAlO3 interface can be efficiently tuned by including monolayer heterovalent metal at the interface. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/95707
ISSN: 00036951
DOI: 10.1063/1.2357012
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