Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.72.045327
Title: First-principles study of ZrO2 Si interfaces: Energetics and band offsets
Authors: Dong, Y.F.
Feng, Y.P. 
Wang, S.J.
Huan, A.C.H. 
Issue Date: 15-Jul-2005
Citation: Dong, Y.F., Feng, Y.P., Wang, S.J., Huan, A.C.H. (2005-07-15). First-principles study of ZrO2 Si interfaces: Energetics and band offsets. Physical Review B - Condensed Matter and Materials Physics 72 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.72.045327
Abstract: First-principles calculations for ZrO2 Si interfaces are presented. Various model interfaces satisfying the general bonding rules were considered. The interface formation energies were evaluated as a function of oxygen potential, which shows the possibility of atomic control of the interface structure by altering the chemical environment. The strain mode and interface structure effects on band offset were investigated. The band offsets were found strongly dependent on the strain modes and interface structures. These results suggest that in epitaxial growth of ZrO2 on Si for gate dielectric applications, the chemical environment should be well controlled to get reproducible band offsets. © 2005 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96658
ISSN: 10980121
DOI: 10.1103/PhysRevB.72.045327
Appears in Collections:Staff Publications

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