Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2202752
Title: Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
Authors: Wang, S.J.
Chai, J.W.
Dong, Y.F.
Feng, Y.P. 
Sutanto, N.
Pan, J.S.
Huan, A.C.H.
Issue Date: 2006
Source: Wang, S.J., Chai, J.W., Dong, Y.F., Feng, Y.P., Sutanto, N., Pan, J.S., Huan, A.C.H. (2006). Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric. Applied Physics Letters 88 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2202752
Abstract: The effect of nitrogen incorporation on the electronic structure and thermal stability of Hf O2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure Hf O2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N-Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96329
ISSN: 00036951
DOI: 10.1063/1.2202752
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

57
checked on Mar 27, 2018

WEB OF SCIENCETM
Citations

49
checked on Mar 27, 2018

Page view(s)

36
checked on Apr 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.