Full Name
Naomi Nandakumar
(not current staff)
 
 
Email
sernn@nus.edu.sg
 

Publications

Refined By:
Author:  Nandakumar, Naomi
File Format:  Adobe PDF
Policy:  Closed

Results 1-8 of 8 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
11-Mar-2019Impact of the manufacturing process on the reverse-bias characteristics of high-efficiency n-type bifacial silicon wafer solar cellsShanmugam, Vinodh ; Chen, Ning ; Yan, Xia ; Khanna, Ankit ; Nagarajan, Balaji ; Rodriguez, John ; Nandakumar, Naomi ; Knauss, Holger; Haverkamp, Helge; Aberle, Armin ; Duttagupta, Shubham 
21-Aug-2017Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiNXLin, Fen ; Toh, Mei Gi ; Thway, Maung ; Li, Xinhang ; Nandakumar, Naomi ; Gay, Xavier; Dielissen, Bas; Raj, Samuel ; Aberle, Armin G 
31-Jul-2017Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface RecombinationHameiri, Ziv; Borojevic, Nino; Mai, Ly; Nandakumar, Naomi ; Kim, Kyung; Winderbaum, Saul
41-Apr-2019Metal contact recombination in monoPoly (TM) solar cells with screen-printed & fire-through contactsPadhamnath, Pradeep ; Wong, Johnson ; Nagarajan, Balaji ; Buatis, Jammaal Kitz ; Ortega, Luisa Ma ; Nandakumar, Naomi ; Khanna, Ankit ; Shanmugam, Vinodh ; Duttagupta, Shubham 
51-Dec-2018monoPoly (TM) cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfacesDuttagupta, Shubham ; Nandakumar, Naomi ; Padhamnath, Pradeep ; Buatis, Jamaal Kitz ; Stangl, Rolf ; Aberle, Armin G 
61-Jan-2016Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?HAMEIRI, ZIV; BOROJEVIC, NINO; MAI, LY; NANDAKUMAR, NAOMI ; KIM, KYUNG; WINDERBAUM, SAUL
71-Nov-2013Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopyHoex, Bram ; Bosman, Michel ; Nandakumar, Naomi ; Kessels, WMM
81-Aug-2017Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contactsXin, Zheng ; Ling, Zhi Peng ; Nandakumar, Naomi ; Kaur, Gurleen; Ke, Cangming ; Liao, Baochen ; Aberle, Armin G ; Stangl, Rolf