Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2017.2706424
Title: Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination
Authors: Hameiri, Ziv
Borojevic, Nino
Mai, Ly
Nandakumar, Naomi 
Kim, Kyung
Winderbaum, Saul
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Photovoltaic cells
silicon
silicon nitride
surface passivation
INTRINSIC CARRIER DENSITY
CHEMICAL-VAPOR-DEPOSITION
CRYSTALLINE SILICON
SOLAR-CELLS
PASSIVATION
HYDROGEN
SI
J(0)-ANALYSIS
PECVD
Issue Date: 1-Jul-2017
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Hameiri, Ziv, Borojevic, Nino, Mai, Ly, Nandakumar, Naomi, Kim, Kyung, Winderbaum, Saul (2017-07-01). Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination. IEEE JOURNAL OF PHOTOVOLTAICS 7 (4) : 996-1003. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2017.2706424
Abstract: © 2017 IEEE. Amorphous silicon nitride has become the state-of-the-art antireflection coating for silicon solar cells. Optimization of silicon nitride films requires consideration of both the film's optical and electrical properties. It is commonly assumed that silicon-rich silicon nitride films (films with high refractive index) provide better surface passivation, compared to that obtained by films with lower indices. However, silicon-rich films are usually very absorptive in the short (and even medium) wavelength range. Development of low absorption silicon nitride films, that provide good surface passivation, is therefore highly valuable. In this study we compare nine different industrial silicon nitride films, all with similarly low refractive index of 2.09 ± 0.01 measured at 633 nm. We demonstrate that these films exhibit very different electrical, chemical, and optical properties despite their similar refractive index values and correlate these differences with the specific deposition conditions. As a result of this investigation, we have developed industrial thermally stable low-absorbing silicon nitride films that provide excellent surface passivation, with surface saturation current density of 7 fA/cm2 on both n- and p-type wafers. We demonstrate that the developed low absorption films provide surface passivation with equal quality to that obtained by industrial silicon-rich silicon nitride films.
Source Title: IEEE JOURNAL OF PHOTOVOLTAICS
URI: https://scholarbank.nus.edu.sg/handle/10635/155041
ISSN: 2156-3381
2156-3403
DOI: 10.1109/JPHOTOV.2017.2706424
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