Please use this identifier to cite or link to this item: https://doi.org/10.7567/JJAP.56.08MB14
Title: Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
Authors: Xin, Zheng 
Ling, Zhi Peng 
Nandakumar, Naomi 
Kaur, Gurleen
Ke, Cangming 
Liao, Baochen 
Aberle, Armin G 
Stangl, Rolf 
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
SOLAR-CELL PASSIVATION
N-TYPE
C-SI
AL2O3
SILICON
RECOMBINATION
Issue Date: 1-Aug-2017
Publisher: IOP PUBLISHING LTD
Citation: Xin, Zheng, Ling, Zhi Peng, Nandakumar, Naomi, Kaur, Gurleen, Ke, Cangming, Liao, Baochen, Aberle, Armin G, Stangl, Rolf (2017-08-01). Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts. JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.56.08MB14
Abstract: © 2017 The Japan Society of Applied Physics. The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (>0.13 nm) to 11 atomic cycles (>1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density Dit(E) and the total interface charge Qtot. Furthermore, the bonding configuration variation of the AlOx films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlOx tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlOx layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.
Source Title: JAPANESE JOURNAL OF APPLIED PHYSICS
URI: https://scholarbank.nus.edu.sg/handle/10635/155043
ISSN: 0021-4922
1347-4065
DOI: 10.7567/JJAP.56.08MB14
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