Please use this identifier to cite or link to this item:
https://doi.org/10.7567/JJAP.56.08MB14
DC Field | Value | |
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dc.title | Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts | |
dc.contributor.author | Xin, Zheng | |
dc.contributor.author | Ling, Zhi Peng | |
dc.contributor.author | Nandakumar, Naomi | |
dc.contributor.author | Kaur, Gurleen | |
dc.contributor.author | Ke, Cangming | |
dc.contributor.author | Liao, Baochen | |
dc.contributor.author | Aberle, Armin G | |
dc.contributor.author | Stangl, Rolf | |
dc.date.accessioned | 2019-06-03T04:32:52Z | |
dc.date.available | 2019-06-03T04:32:52Z | |
dc.date.issued | 2017-08-01 | |
dc.identifier.citation | Xin, Zheng, Ling, Zhi Peng, Nandakumar, Naomi, Kaur, Gurleen, Ke, Cangming, Liao, Baochen, Aberle, Armin G, Stangl, Rolf (2017-08-01). Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts. JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.56.08MB14 | |
dc.identifier.issn | 0021-4922 | |
dc.identifier.issn | 1347-4065 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/155043 | |
dc.description.abstract | © 2017 The Japan Society of Applied Physics. The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (>0.13 nm) to 11 atomic cycles (>1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density Dit(E) and the total interface charge Qtot. Furthermore, the bonding configuration variation of the AlOx films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlOx tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlOx layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells. | |
dc.language.iso | en | |
dc.publisher | IOP PUBLISHING LTD | |
dc.source | Elements | |
dc.subject | Science & Technology | |
dc.subject | Physical Sciences | |
dc.subject | Physics, Applied | |
dc.subject | Physics | |
dc.subject | SOLAR-CELL PASSIVATION | |
dc.subject | N-TYPE | |
dc.subject | C-SI | |
dc.subject | AL2O3 | |
dc.subject | SILICON | |
dc.subject | RECOMBINATION | |
dc.type | Article | |
dc.date.updated | 2019-06-03T01:37:57Z | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.description.doi | 10.7567/JJAP.56.08MB14 | |
dc.description.sourcetitle | JAPANESE JOURNAL OF APPLIED PHYSICS | |
dc.description.volume | 56 | |
dc.description.issue | 8 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications Elements |
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File | Description | Size | Format | Access Settings | Version | |
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2017ZXin_Ultrathin ALD Al2O3_JJAP.pdf | 2.08 MB | Adobe PDF | CLOSED | None |
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