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Gengchiau Liang

rp08366

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Full Name
Gengchiau Liang
Variants
Liang, G.C.A.
Liang, G.
Liang, G.-C.
Liang, G.C.
 
Main Affiliation
 
Faculty
 
Email
elelg@nus.edu.sg
 

Publications

Results 41-60 of 90 (Search time: 0.012 seconds).

Issue DateTitleAuthor(s)
4122-Aug-2011High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effectsLiang, G. ; Bala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
422008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
43Nov-2012Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
442010Influence of edge roughness on graphene nanoribbon resonant tunnelling diodesLiang, G. ; Khalid, S.B.; Lam, K.-T.
451-Feb-2019Influence of Size and Shape on the Performance of VCMA-Based MTJsMiriyala, Venkata Pavan Kumar ; Fong, Xuanyao ; Liang, Gengchiau 
462013Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?Gupta, G.; Jalil, M.B.A. ; Liang, G. 
472016Klein tunneling in Weyl semimetals under the influence of magnetic fieldYesilyurt C.; Tan S.G. ; Liang G. ; Jalil M.B.A. 
481-Aug-2010Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulationKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
91998Multiband quantum transmitting boundary method for non-orthogonal basisLiang G.-C. ; Lin Y.A.; Ting D.Z.-Y.; Chang Y.-C.
102013Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structureGoh, K.H.; Guo, Y.; Gong, X.; Liang, G.-C. ; Yeo, Y.-C. 
112016Perfect valley filter in strained graphene with single barrier regionYesilyurt C.; Ghee Tan S. ; Liang G. ; Jalil M.B.A. 
12Mar-2007Performance analysis of a Ge/Si core/shell nanowire field-effect transistorLiang, G. ; Xiang, J.; Kharche, N.; Klimeck, G.; Lieber, C.M.; Lundstrom, M.
132011Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistorsLam, K.-T.; Peck, Y.-Z.; Lim, Z.-H.; Liang, G. 
142012Performance comparison of III-V MOSFETs with source filter for electron energyLam, K.-T.; Yeo, Y.-C. ; Liang, G. 
1521-Oct-2012Performance evaluation of electro-optic effect based graphene transistorsGupta, G.; Abdul Jalil, M.B. ; Yu, B.; Liang, G. 
162012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G. 
172012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G. 
182009Shape effects in graphene nanoribbon resonant tunneling diodes: A computational studyTeong, H.; Lam, K.-T.; Khalid, S.B.; Liang, G. 
19Apr-2010Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructureKoong, C.S.; Samudra, G. ; Liang, G. 
202011Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.