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|Title:||Performance comparison of III-V MOSFETs with source filter for electron energy||Authors:||Lam, K.-T.
|Issue Date:||2012||Citation:||Lam, K.-T.,Yeo, Y.-C.,Liang, G. (2012). Performance comparison of III-V MOSFETs with source filter for electron energy. Technical Digest - International Electron Devices Meeting, IEDM : 17.6.1-17.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2012.6479062||Abstract:||We evaluated the performances of two high-energy-electrons filtering MOSFET designs, the superlattice source-extension (SL) MOSFET and the p +/n+ source-junction (p+n+ source) MOSFET, using the sp3d5s full-band tight-binding model, coupled with a non-equilibrium Green's function quantum transport simulator in the ballistic regime. III-V semicoductor heterojunctions made up of GaAs and In53Ga47As are investigated and the optimizing parameters such as the length of the barrier and well regions for the SL-MOSFETs and the doping concentrations and the length of n+ region for the p +n+ source MOSFETs are varied to understand their effects on the device performance parameters. More detailed interactions between electrons are considered in the present full-band simulations. Our optimized SL-MOSFET and p+n+ source MOSFET achieve ION = 0.81 and 0.60 mA/μm, SS = 20.9 and 23.1mV/dec@VDS=0.6V, respectively. © 2012 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/84075||ISBN:||9781467348706||ISSN:||01631918||DOI:||10.1109/IEDM.2012.6479062|
|Appears in Collections:||Staff Publications|
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