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|Title:||High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects||Authors:||Liang, G.
Bala Kumar, S.
|Issue Date:||22-Aug-2011||Citation:||Liang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2011-08-22). High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects. Applied Physics Letters 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3624459||Abstract:||A large magnetoresistance effect is obtained at roomerature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B 0 T is greatly decreased while the current at B 0 T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at roomerature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias. © 2011 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56188||ISSN:||00036951||DOI:||10.1063/1.3624459|
|Appears in Collections:||Staff Publications|
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