Please use this identifier to cite or link to this item:
|Title:||High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects|
|Authors:||Liang, G. |
Bala Kumar, S.
|Citation:||Liang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2011-08-22). High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects. Applied Physics Letters 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3624459|
|Abstract:||A large magnetoresistance effect is obtained at roomerature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B 0 T is greatly decreased while the current at B 0 T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at roomerature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 20, 2018
WEB OF SCIENCETM
checked on Nov 13, 2018
checked on Nov 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.