Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3624459
Title: High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
Authors: Liang, G. 
Bala Kumar, S. 
Jalil, M.B.A. 
Tan, S.G.
Issue Date: 22-Aug-2011
Source: Liang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2011-08-22). High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects. Applied Physics Letters 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3624459
Abstract: A large magnetoresistance effect is obtained at roomerature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B 0 T is greatly decreased while the current at B 0 T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at roomerature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56188
ISSN: 00036951
DOI: 10.1063/1.3624459
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