Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3624459
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dc.titleHigh magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
dc.contributor.authorLiang, G.
dc.contributor.authorBala Kumar, S.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-17T02:51:43Z
dc.date.available2014-06-17T02:51:43Z
dc.date.issued2011-08-22
dc.identifier.citationLiang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2011-08-22). High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects. Applied Physics Letters 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3624459
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56188
dc.description.abstractA large magnetoresistance effect is obtained at roomerature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B 0 T is greatly decreased while the current at B 0 T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at roomerature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3624459
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3624459
dc.description.sourcetitleApplied Physics Letters
dc.description.volume99
dc.description.issue8
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000294359100064
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