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|Title:||Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure||Authors:||Goh, K.H.
|Issue Date:||2013||Citation:||Goh, K.H.,Guo, Y.,Gong, X.,Liang, G.-C.,Yeo, Y.-C. (2013). Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure. Technical Digest - International Electron Devices Meeting, IEDM : 16.5.1-16.5.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724643||Abstract:||In this work, we report the realization of In0.53Ga 0.47As Junctionless FET (JLFET) with the shortest reported channel length Lch (6 nm) for any III-V transistors. The JLFET features a 1 nm-thick extremely-thin channel sandwiched between a 1 nm-thick InP cap and the InP substrate, and a heavily doped raised S/D structure. Peak transconductance Gm. Peak of 1480 μS/μm at VDS = 0.7 V with an EOT of 2.5 nm and an ultra-low S/D resistance RSD of 165 Ω.μm were achieved. In addition, the ballistic behavior of sub-7 nm III-V transistors was experimentally investigated by using a novel extraction approach for the first time. The In0.53Ga0.47As JLFET with LCH of 6 nm was demonstrated to have a mean free path λ of 27.2 nm and nearly ballistic transport with ballistic efficiency B of 0.82. © 2013 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/84001||ISBN:||9781479923076||ISSN:||01631918||DOI:||10.1109/IEDM.2013.6724643|
|Appears in Collections:||Staff Publications|
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