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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Chan, D.S.H.
Department:  ELECTRICAL & COMPUTER ENGINEERING
Date Issued:  2005

Results 1-9 of 9 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
22005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
3Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
42005Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devicesRen, C.; Chan, D.S.H. ; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Kwong, D.-L.
523-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
623-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
715-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
828-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
9Feb-2005Thermally robust TaTbxN metal gate electrode for n-MOSFETs applicationsRen, C.; Yu, H.Y. ; Wang, X.P.; Ma, H.H.H. ; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Tung, C.H.; Balasubramanian, N.; Huan, A.C.H.; Pan, J.S.; Kwong, D.-L.