1. ScholarBank@NUS

Tan Leng Seow

rp05052

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [2010 TO 2019]

Results 1-8 of 8 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
1Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
22015Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivationLiu, X.; Liu, Z. ; Pannirselvam, S. ; Pan, J.; Liu, W.; Jia, F.; Lu, Y.; Liu, C.; Yu, W.; He, J.; Tan, L.S. 
3Jan-2010High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor depositionLiu, X.; Chin, H.-C.; Tan, L.S. ; Yeo, Y.-C. 
42013Hybrid plasmonic structures: Design and fabrication by laser meansXu, L.; Luo, F.F.; Tan, L.S. ; Luo, X.G.; Hong, M.H. 
529-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C. 
6Jan-2011In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectricLiu, X.; Chin, H.-C.; Tan, L.-S. ; Yeo, Y.-C. 
7Jun-2010Large area parallel surface nanostructuring with laser irradiation through microlens arraysLim, C.S. ; Hong, M.H. ; Lin, Y. ; Tan, L.S. ; Kumar, A.S. ; Rahman, M. 
82-May-2011Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristicsLiu, X.; Liu, B.; Low, E.K.F.; Liu, W.; Yang, M.; Tan, L.-S. ; Teo, K.L. ; Yeo, Y.-C.