Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
 
 
Email
elecef@nus.edu.sg
 
Other emails
 

Results 81-90 of 90 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
812005Suppressed leakage in low temperature RTA (700°C 30S) junctions with buried epitaxial Si 1-yC yTan, C.F.; Lee, H.; Liu, J.P.; Quek, E.; Chan, L.; Chor, E.F. 
822005Suppressed leakage in low temperature RTA (700°C 30S) junctions with buried epitaxial Si 1-yC yTan, C.F.; Lee, H.; Liu, J.P.; Quek, E.; Chan, L.; Chor, E.F. 
8319-Jul-1999Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporationCha, C.-L.; Chor, E.-F. ; Gong, H. ; Bourdillon, A.J. ; Jia, Y.-M.; Pan, J.-S. ; Zhang, A.-Q.; Chan, L.
84Jun-1997The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAsLau, W.S. ; Chor, E.F. ; Kek, S.P.; Abdul Aziz, W.H.B.; Lim, H.C.; Heng, C.H. ; Zhao, R.
852013Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contactBera, M.K.; Liu, Y.; Kyaw, L.M.; Ngoo, Y.J.; Chor, E.F. 
861998Threshold voltage instabilities of fresh flash memory devices caused by plasma chargingCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
872006Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxideHu, G. ; Kumar, B. ; Gong, H. ; Chor, E.F. ; Wu, P.
882006Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxideHu, G. ; Kumar, B. ; Gong, H. ; Chor, E.F. ; Wu, P.
892008Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregationSinha, M.; Chor, E.F. ; Yeo, Y.-C. 
902006ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targetsHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.