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|Title:||Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide||Authors:||Hu, G.
|Issue Date:||2006||Citation:||Hu, G., Kumar, B., Gong, H., Chor, E.F., Wu, P. (2006). Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide. Applied Physics Letters 88 (10) : -. ScholarBank@NUS Repository.||Abstract:||Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n -type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about 1.1 × 10-4 Ω cm2 and the transmittance of the ZnOIZO (520350 nm) film was more than 75% in the 450-1100 nm wavelength range. After annealing at 400 °C for 5 min in a vacuum (2× 10-5 mbar), the specific contact resistance was reduced by about two orders of magnitude to 3.8× 10-6 Ω cm2, while maintaining the contact stability and high optical transparency. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/86816||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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