Please use this identifier to cite or link to this item:
|Title:||ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targets||Authors:||Hu, G.
|Issue Date:||2006||Citation:||Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targets. Applied Physics Letters 89 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2221399||Abstract:||We have demonstrated the growth and control of the conductivity type (n or p) of ZnO doped with phosphorus (P). The success of p-type and n-type P-doped ZnO is confirmed by Hall effect measurements, Seebeck measurements, and the realization of p-n homojunctions. The room temperature carrier concentration, mobility, and resistivity of the as-deposited p-type P-doped ZnO are 2.8 × 1017 cm-3, 0.341 cm2/Vs, and 65.4 Ω cm, respectively. The P-doped ZnO p-n homojunctions have a turn-on voltage of about 3.4 V. Photoluminescence spectra show that the P-doped films may have a shallow accepter energy level. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83284||ISSN:||00036951||DOI:||10.1063/1.2221399|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 8, 2020
WEB OF SCIENCETM
checked on Mar 23, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.