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|Title:||ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targets|
|Authors:||Hu, G. |
|Citation:||Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targets. Applied Physics Letters 89 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2221399|
|Abstract:||We have demonstrated the growth and control of the conductivity type (n or p) of ZnO doped with phosphorus (P). The success of p-type and n-type P-doped ZnO is confirmed by Hall effect measurements, Seebeck measurements, and the realization of p-n homojunctions. The room temperature carrier concentration, mobility, and resistivity of the as-deposited p-type P-doped ZnO are 2.8 × 1017 cm-3, 0.341 cm2/Vs, and 65.4 Ω cm, respectively. The P-doped ZnO p-n homojunctions have a turn-on voltage of about 3.4 V. Photoluminescence spectra show that the P-doped films may have a shallow accepter energy level. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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