Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2221399
Title: ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targets
Authors: Hu, G. 
Gong, H. 
Chor, E.F. 
Wu, P.
Issue Date: 2006
Citation: Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targets. Applied Physics Letters 89 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2221399
Abstract: We have demonstrated the growth and control of the conductivity type (n or p) of ZnO doped with phosphorus (P). The success of p-type and n-type P-doped ZnO is confirmed by Hall effect measurements, Seebeck measurements, and the realization of p-n homojunctions. The room temperature carrier concentration, mobility, and resistivity of the as-deposited p-type P-doped ZnO are 2.8 × 1017 cm-3, 0.341 cm2/Vs, and 65.4 Ω cm, respectively. The P-doped ZnO p-n homojunctions have a turn-on voltage of about 3.4 V. Photoluminescence spectra show that the P-doped films may have a shallow accepter energy level. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83284
ISSN: 00036951
DOI: 10.1063/1.2221399
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